The use of carbon nanotubes (CNT) as interconnects in future integrated circuits (IC) is being considered as a replacement for copper. As this research needs also innovative metrology solutions, we have developed a combined approach for the plane-view analysis of CNT integrated in contact holes where transmission electron microscopy (TEM) enables the quantitative measurement of density and structure of the CNT and where scanning spreading resistance microscopy (SSRM) is used to electrically map the distribution of the CNT. This paper explains the used methodologies in detail and presents results from 300 nm diameter contact holes filled with CNT of 8-12 nm in diameter and a density of about 2 x 1011 cm-2.

The three-dimensional (3D) distribution of carbon nanotubes (CNTs) grown inside semiconductor contact holes is studied by electron tomography. The use of a specialized tomography holder results in an angular tilt range of ±90°, which means that the so-called “missing wedge” is absent. The transmission electron microscopy (TEM) sample for this purpose consists of a micropillar that is prepared by a dedicated procedure using the focused ion beam (FIB) but keeping the CNTs intact. The 3D results are combined with energy dispersive X-ray spectroscopy (EDS) to study the relation between the CNTs and the catalyst particles used during their growth. The reconstruction, based on the full range of tilt angles, is compared with a reconstruction where a missing wedge is present. This clearly illustates that the missing wedge will lead to an unreliable interpretation and will limit quantitative studies.

The potential use of carbon nanotubes (CNT) as interconnects requires also new characterization approaches as the existing ones are optimized for three-dimensional materials and do not work for inherently one-dimensional structures like CNTs. Therefore, we have developed a so-called pick-and-place process which allows to remove an individual CNT from a specific site and to place it at another location for further analysis. The approach is based on nanomanipulation combined with scanning electron microscopy (SEM). This paper presents the pick-and-place concept and explains the different steps required for its successful application. We further demonstrate its power by characterizing individual CNTs using transmission electron microscopy (TEM) and atomic force microscopy (AFM). The developed pick-and-place approach overcomes the challenge of site-specific analysis of CNT interconnects and strongly facilitates the routine analysis of CNTs.