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As the key part for energy amplification of high-power laser systems, disk amplifiers must work in an extremely clean environment. Different from the traditional cleanliness control scheme of active intake and passive exhaust (AIPE), a new method of active exhaust and passive intake (AEPI) is proposed in this paper. Combined with computational fluid dynamics (CFD) technology, through the optimization design of the sizes, shapes, and locations of different outlets and inlets, the turbulence that is unfavorable to cleanliness control is effectively avoided in the disk amplifier cavity during the process of AEPI. Finally, the cleanliness control of the cavity of the disk amplifier can be realized just by once exhaust. Meanwhile, the micro negative pressure environment in the amplifier cavity produced during the exhaust process reduces the requirement for sealing. This method is simple, time saving, gas saving, efficient, and safe. It is also suitable for the cleanliness control of similar amplifiers.
In this paper, we review the status of the multifunctional experimental platform at the National Laboratory of High Power Laser and Physics (NLHPLP). The platform, including the SG-II laser facility, SG-II 9th beam, SG-II upgrade (SG-II UP) facility, and SG-II 5 PW facility, is operational and available for interested scientists studying inertial confinement fusion (ICF) and a broad range of high-energy-density physics. These facilities can provide important experimental capabilities by combining different pulse widths of nanosecond, picosecond, and femtosecond scales. In addition, the SG-II UP facility, consisting of a single petawatt system and an eight-beam nanosecond system, is introduced including several laser technologies that have been developed to ensure the performance of the facility. Recent developments of the SG-II 5 PW facility are also presented.
Graphitic carbon nitride (g-C3N4) is considered as a promising heterogeneous catalyst for photocatalytic H2 evolution from water under visible light illustration, and its photocatalytic performance could be controlled through its texture and optical/electronic properties. Herein, we present a facile one-step heating method for the synthesis of B/P/F doped g-C3N4 photocatalysts (BCN, PCN, and FCN). The prepared photocatalysts were characterized by XRD, SEM, UV-vis absorption, FTIR, BET, XPS, PL, and photocurrent measurement. The results show that the B/P/F doping increased the interplanar stacking distance of g-C3N4, enlarged the optical absorption range, and improved the photocatalytic activity of H2 evolution. FCN exhibits the highest photocatalytic activity, followed by BCN, and PCN that has the lowest performance. This work studies the doping effects of the nonmetal elements on the photocatalytic activities, the electronic structures as well as the band gaps of g-C3N4, to provide a feasible modification pathway to design and synthesize highly efficient photocatalysts.
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