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Mg Doped GaN Using a Valved, Thermally Energetic Source: Enhanced Incorporation, Control and Quantitative Optimization
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- Journal:
- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y8.11
- Print publication:
- 2003
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III-Nitride Growth on Lithium Niobate: A New Substrate Material for Polarity Engineering in III-Nitride Heteroepitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L1.4
- Print publication:
- 2002
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Molecular Beam Epitaxial Growth of AlN/GaN Multiple Quantum Wells
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- Journal:
- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L6.2
- Print publication:
- 2002
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A Chemical Perspective of GaN Polarity: The use of Hydrogen Plasma Dry Etching Versus NaOH Wet Etching to Determine Polarity
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- Journal:
- MRS Online Proceedings Library Archive / Volume 722 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, K3.4
- Print publication:
- 2002
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Time Resolved Optical Studies of InGaN Layers Grown on LGO
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- Journal:
- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L11.6
- Print publication:
- 2002
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Interfacial Structure and Defects in GaN/AlGaN Heterojunction Epitaxially Grown on LiGa02 Substrate by Molecular Beam Epitaxy
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- Journal:
- Microscopy and Microanalysis / Volume 6 / Issue S2 / August 2000
- Published online by Cambridge University Press:
- 02 July 2020, pp. 1106-1107
- Print publication:
- August 2000
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Low Temperature Nitridation Combined With High Temperature Buffer Annealing for High Quality GaN Grown by Plasma-Assisted MBE
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue 1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, e10
- Print publication:
- 2000
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