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Molecular Beam Epitaxial Growth of AlN/GaN Multiple Quantum Wells

Published online by Cambridge University Press:  11 February 2011

Hong Wu ,
William J. Schaff ,
Goutam Koley ,
Madalina Furis ,
A. N. Cartwright ,
Karen A. Mkhoyan ,
John Silcox ,
Walter Henderson ,
W. Alan Doolittle  and
A. V. Osinsky
Hong Wu
Affiliation:
School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, U.S.A.
William J. Schaff
Affiliation:
School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, U.S.A.
Goutam Koley
Affiliation:
School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, U.S.A.
Madalina Furis
Affiliation:
Department of Electrical Engineering, State University of New York at Buffalo, Buffalo, NY 14260, U.S.A.
A. N. Cartwright
Affiliation:
Department of Electrical Engineering, State University of New York at Buffalo, Buffalo, NY 14260, U.S.A.
Karen A. Mkhoyan
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, U.S.A.
John Silcox
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, U.S.A.
Walter Henderson
Affiliation:
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, U.S.A.
W. Alan Doolittle
Affiliation:
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, U.S.A.
A. V. Osinsky
Affiliation:
Science and Technology, Corning Inc., Corning, NY 14831, U.S.A.
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Abstract

AlN/GaN multiple quantum wells (MQWs) were grown on sapphire substrates by plasmaassisted molecular beam epitaxy. Growth temperature, III/V ratio, growth rate, and other growth parameters were optimized for the buffer layer and the MQWs, separately. The growth of AlN buffer was kept as Al-rich as possible while the formation of Al droplets was avoided. A GaN buffer layer was also tried but proved to be inferior to AlN buffer probably due to its larger surface roughness, higher dislocation density, and larger lattice mismatch with the AlN barrier layers in the MQWs. Very flat surfaces with a RMS roughness of 0.7nm were observed by atomic force microscopy (AFM) on the samples with both AlN buffer layer and 20 MQWs deposited under the optimized growth conditions. Abrupt interfaces and excellent periodicities of the MQWs were confirmed by X-ray diffraction (XRD) and reflectivity measurements with MQWs' satellite peaks clearly visible up to the 10th order. Room-temperature intense ultraviolet (UV) photoluminescence (PL) emission with wavelength in the range of 320–350nm was also observed from the MQWs with well width ranging from 1.0 to 1.5nm. These MQW structures can potentially be used for UV light emitters and quantum cascade lasers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L6.2
Copyright
Copyright © Materials Research Society 2003

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References

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