Time-resolved photoluminescence studies can provide useful information for the development of InGaN/GaN heterostructures for long wavelength visible emitters. In this paper, we present results of time-resolved photoluminescence from samples grown using two different approaches to achieve green emission from InGaN/GaN MQWs. In one approach, samples, with high indium incorporation, were grown on a high quality AlN substrate to achieve green emission. The resulting photoluminescence decay of the green luminescence is long-lived and non-exponential. Quantitative analysis showed that the decay has a stretched-exponential characteristic, typical of InGaN/GaN MQW with potential fluctuation along the growth plane. This carrier localization, in a structure with low defect density, proves to be an effective means to achieve green emission. In another approach, a piezoelectric Stark-like ladder effect is used. In this case, a methodical layer-by-layer growth homogeneity optimization process was adopted to achieve an optical transition below the electron to heavy-hole (e1hh1) transition when the quantum well is subjected to the strong piezoelectric polarization dipole. This approach has proven to be successful in achieving green luminescence on conventional sapphire substrates. The resulting photoluminescence decay at 14 K, of a sample grown by this approach, is single exponential and shorter in duration than the decay observed in the first approach. This exponential decay is consistent with previous AFM studies that revealed a homogeneous active region.