3 results
Improved Inversion Channel Mobility in Si-face 4H-SiC MOSFETs by Phosphorus Incorporation Technique
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1246 / 2010
- Published online by Cambridge University Press:
- 01 February 2011, 1246-B06-06
- Print publication:
- 2010
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- Article
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High Resistivity GaN Formed by Ion Implantation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G11.30
- Print publication:
- 2000
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- Article
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Initial Stage of Heteroepitaxial Growth of SiC on Si by Gas Source MBE Using Hydrocarbon Radicals
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- Journal:
- MRS Online Proceedings Library Archive / Volume 318 / 1993
- Published online by Cambridge University Press:
- 21 February 2011, 201
- Print publication:
- 1993
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- Article
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