5 results
Dependences of Structural Parameters on the Characteristics of Poly-Si Thin-Film Transistors after Plasma Passivation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 762 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, A18.8
- Print publication:
- 2003
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Improvement in Ferroelectric Properties of Sol-Gel Derived SrBi2Ta2O9 thin films with seeding layers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 718 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, D10.11
- Print publication:
- 2002
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Fabrication and Characterization of Poly-Si Schottky-Barrier Thin-Film Transistors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 685 / 2001
- Published online by Cambridge University Press:
- 17 March 2011, D12.5.1
- Print publication:
- 2001
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A Multilevel Metal Interconnect Technology with Intra-Metal Air-Gap for Quarter-Micron-and-Beyond High-Performance Processes
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- Journal:
- MRS Online Proceedings Library Archive / Volume 612 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, D4.7.1
- Print publication:
- 2000
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Breakdown Characteristics of Ultra-Thin Gate Oxides Caused by Plasma Charging
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- Journal:
- MRS Online Proceedings Library Archive / Volume 567 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 313
- Print publication:
- 1999
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