7 results
A Comparison of Magnesium and Beryllium Acceptors in GaN Grown by rf-Plasma Assisted Molecular Beam Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G3.3
- Print publication:
- 2000
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Synthesis of Nitrogen-Rich GaNAs Semiconductor Alloys and Arsenic-Doped GaN by Metalorganic Chemical Vapor Deposition
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 299-304
- Print publication:
- 1999
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Synthesis of Nitrogen-Rich GaNAs Semiconductor Alloys and Arsenic-Doped GaN by Metalorganic Chemical Vapor Deposition
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G3.44
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- 1998
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Measurement of InxGa1-xN and AlxGa1-xN Compositions by RBS and SIMS
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- Journal:
- MRS Online Proceedings Library Archive / Volume 468 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 275
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- 1997
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Complete Characterization of AlxGa1-xN/InxGa1-xN/GaN Devices by Sims
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- Journal:
- MRS Online Proceedings Library Archive / Volume 468 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 281
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- 1997
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Interdiffusion of Amorphous Si/Ge Multilayers Under Hydrostatic Pressure
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- Journal:
- MRS Online Proceedings Library Archive / Volume 321 / 1993
- Published online by Cambridge University Press:
- 15 February 2011, 59
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- 1993
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Effect of Pressure on Arsenic Diffusion in Germanium
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- Journal:
- MRS Online Proceedings Library Archive / Volume 325 / 1993
- Published online by Cambridge University Press:
- 22 February 2011, 189
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- 1993
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