14 results
Structural, Morphological, Optical and Electrical Properties of Bulk (0001) GaN:Fe Wafers
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- Journal:
- MRS Advances / Volume 3 / Issue 3 / 2018
- Published online by Cambridge University Press:
- 26 February 2018, pp. 179-184
- Print publication:
- 2018
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Effects of MBE growth on the optical properties of AlGaN quantum wells
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1289 / 2011
- Published online by Cambridge University Press:
- 16 September 2011, mrsf10-1289-h05-12
- Print publication:
- 2011
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Phonon Decay in GaN and AlN and Self-Heating in III-N Devices
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- Journal:
- MRS Online Proceedings Library Archive / Volume 955 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0955-I12-11
- Print publication:
- 2006
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Evolution of the Rayleigh–Taylor instability in the mixing zone between gases of different densities in a field of variable acceleration
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- Journal:
- Laser and Particle Beams / Volume 21 / Issue 3 / July 2003
- Published online by Cambridge University Press:
- 03 March 2004, pp. 393-402
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Mechanism of Metalorganic MBE Growth of High Quality AlN on Si (111).
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- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E3.35
- Print publication:
- 2004
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Optical Properties of AlN/AlGa(In)N Short Period Superlattices – Deep UV Light Emitting Diodes
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- Journal:
- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y1.9
- Print publication:
- 2003
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Preparation of Optoelectronic Devices Based on AlN/AlGaN Superlattices
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- Journal:
- MRS Online Proceedings Library Archive / Volume 744 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, M10.1
- Print publication:
- 2002
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Micro-Raman Scattering From Hexagonal GaN, AlN, and AlxGa1-xN Grown on (111) Oriented Silicon: Stress Mapping of Cracks
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- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I3.55.1
- Print publication:
- 2001
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In situ Pyrometric Interferometry For Molecular Beam Epitaxy of AlxGa1−xN on Si (111)
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- Journal:
- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G6.57
- Print publication:
- 2000
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High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 467-473
- Print publication:
- 2000
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- Article
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Gas source molecular beam epitaxy of high quality AlGaN on Si and sapphire
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- Journal:
- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G11.37
- Print publication:
- 2000
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Dielectric Function of AlN Grown on Si (111) by MBE
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- Journal:
- MRS Online Proceedings Library Archive / Volume 572 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 231
- Print publication:
- 1999
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High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W8.3
- Print publication:
- 1999
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X-ray Diffraction Study of Chalcopyrite ZnSnP2 Epitaxial Layers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 583 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 277
- Print publication:
- 1999
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