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Dielectric Function of AlN Grown on Si (111) by MBE

Published online by Cambridge University Press:  10 February 2011

Stefan Zollner ,
Atul Konkar ,
R. B. Gregory ,
S. R. Wilson ,
S. A. Nikishin  and
H. Temkin
Stefan Zollner
Affiliation:
Motorola Semiconductor Products Sector, Embedded Systems Technology Laboratories, MD M360, 2200 West Broadway Road, Mesa, AZ 85202
Atul Konkar
Affiliation:
Motorola Semiconductor Products Sector, Embedded Systems Technology Laboratories, MD M360, 2200 West Broadway Road, Mesa, AZ 85202
R. B. Gregory
Affiliation:
Motorola Semiconductor Products Sector, Embedded Systems Technology Laboratories, MD M360, 2200 West Broadway Road, Mesa, AZ 85202
S. R. Wilson
Affiliation:
Motorola Semiconductor Products Sector, Embedded Systems Technology Laboratories, MD M360, 2200 West Broadway Road, Mesa, AZ 85202
S. A. Nikishin
Affiliation:
Texas Tech University, Dept. of Electrical Engineering, Box 43102, Lubbock, TX 79409
H. Temkin
Affiliation:
Texas Tech University, Dept. of Electrical Engineering, Box 43102, Lubbock, TX 79409
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Abstract

We measured the ellipsometric response from 0.7–5.4 eV of c-axis oriented AlN on Si (111) grown by molecular beam epitaxy. We determine the film thicknesses and find that for our AlN the refractive index is about 5–10% lower than in bulk AlN single crystals. Most likely, this discrepancy is due to a low film density (compared to bulk AlN), based on measurements using Rutherford backscattering. The films were also characterized using atomic force microscopy and x-ray diffraction to study the growth morphology. We find that AlN can be grown on Si (111) without buffer layers resulting in truely two-dimensional growth, low surface roughness, and relatively narrow x-ray peak widths.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 231
Copyright
Copyright © Materials Research Society 1999

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References

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