6 results
MANOS erase performance dependence on nitrogen annealing conditions
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1729 / 2015
- Published online by Cambridge University Press:
- 03 March 2015, pp. 15-20
- Print publication:
- 2015
-
- Article
- Export citation
Influence of Graphene Interlayers on Electrode-Electrolyte Interfaces in Resistive Random Accesses Memory Cells
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1729 / 2015
- Published online by Cambridge University Press:
- 04 March 2015, pp. 29-34
- Print publication:
- 2015
-
- Article
- Export citation
Formation of Ge Nanocrystals in High-k Dielectric Layers for Memory Applications
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1250 / 2010
- Published online by Cambridge University Press:
- 01 February 2011, 1250-G06-04
- Print publication:
- 2010
-
- Article
- Export citation
Nanocrystal Memory Device Utilizing GaN Quantum Dots by RF MBE
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1250 / 2010
- Published online by Cambridge University Press:
- 01 February 2011, 1250-G06-03
- Print publication:
- 2010
-
- Article
- Export citation
Annealing Effects on Si Nanocrystal Nonvolatile Memories
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1250 / 2010
- Published online by Cambridge University Press:
- 01 February 2011, 1250-G01-02
- Print publication:
- 2010
-
- Article
- Export citation
Oxide-nitride-oxide Dielectric Stacks with Embedded Si-nanoparticles Fabricated by Low-energy Ion-beam-synthesis
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 997 / 2007
- Published online by Cambridge University Press:
- 01 February 2011, 0997-I03-10
- Print publication:
- 2007
-
- Article
- Export citation