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Influence of Graphene Interlayers on Electrode-Electrolyte Interfaces in Resistive Random Accesses Memory Cells

Published online by Cambridge University Press:  04 March 2015

Michael Lübben ,
Panagiotis Karakolis ,
Anja Wedig ,
Vassilios Ioannou ,
Pascal Normand ,
Panagiotis Dimitrakis  and
Ilia Valov
Michael Lübben
Affiliation:
Peter Gruenberg Institut, Forschungszentrum Jülich GmbH, Jülich, Germany
Panagiotis Karakolis
Affiliation:
Institute of Nanoscience and Nanotechnology, NCSR Demkritos, Athens, Greece
Anja Wedig
Affiliation:
Peter Gruenberg Institut, Forschungszentrum Jülich GmbH, Jülich, Germany
Vassilios Ioannou
Affiliation:
Institute of Nanoscience and Nanotechnology, NCSR Demkritos, Athens, Greece
Pascal Normand
Affiliation:
Institute of Nanoscience and Nanotechnology, NCSR Demkritos, Athens, Greece
Panagiotis Dimitrakis
Affiliation:
Institute of Nanoscience and Nanotechnology, NCSR Demkritos, Athens, Greece
Ilia Valov
Affiliation:
Peter Gruenberg Institut, Forschungszentrum Jülich GmbH, Jülich, Germany
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Abstract

The behavior of the redox-based resistive switching memories is influenced by chemical interactions between the electrode and the solid electrolyte, as well as by local environment. The existence of different chemical potential gradients is resulting in nanobattery effect lowering the stability of the devices. In order to minimize these effects we introduce a graphene layer at the active electrode – solid electrolyte interface. We observe that graphene is acting as an effective diffusion barrier in the SiO2-based electrochemical metallization cells and acts catalytically on the electrochemical processes prior to resistive switching.

Keywords

memoryelectronic materialsecondary ion mass spectroscopy (SIMS)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1729: Symposium M – Materials and Technology for Nonvolatile Memories , 2015 , pp. 29 - 34
Copyright
Copyright © Materials Research Society 2015 

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References

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