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RF linearity trade-offs for varying T-gate geometries of GaN HEMTs on Si
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- Journal:
- International Journal of Microwave and Wireless Technologies / Volume 15 / Issue 6 / July 2023
- Published online by Cambridge University Press:
- 20 March 2023, pp. 983-992
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Atomistic Understanding of a Single Gated Dopant Atom in a MOSFET
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1067 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1067-B03-07
- Print publication:
- 2008
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Ion implantation for low-resistive source/drain contacts in FinFET devices
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1070 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1070-E02-01
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- 2008
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