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Uniform and reproducible silicon tip arrays were fabricated using the reactive ion etching followed by the re-oxidation sharpening. Molybdenum was then coated on the some of the silicon tip array. Current-voltage characteristics and current fluctuations were measured in the high vacuum environment. Field emission currents were proved by the Fowler-Nordheim plot studies.
Strip-shaped diamond-tip field emitter array was fabricated by using the transfer mold technique. The sharp turn-on characteristic was observed from the current-voltage measurement of the fabricated diamond-tip field emitter array. The turn-on characteristic of the diamond-tip field emitter array was compared with that of a flat diamond film. High emission current density was obtained from the diamond-tip field emitter array. The threshold voltage of the diamond-tip field emitter array was lower than that of a flat diamond film.
We have studied the structural properties of hydrogenated carbon films deposited by plasma enhanced chemical vapor deposition (PECVD). The substrate holder in reaction chamber could be biased and be heated. The Raman peak intensity at 1350 cm−1 was increased by reducing CH4 flow rate. The film structure changed from soft a-C:H to hard carbon with decreasing CH4 flow rate, resulted from increased self-bias. The 1520 cm−1 peak shifts to higher frequency by reducing the CH4flow rate, probably resulted from the increased internal stress.
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