Home cooking has been suggested as a key to healthy dietary intakes. However, little is known about the association between cooking behaviour and nutrient intake among young-to-middle-aged women. We aimed to investigate the association between home cooking frequency and nutrient intake adequacy among married Japanese women. Self-administered questionnaires were used to assess the weekly frequency of cooking dinner at home and habitual nutrient intake during the preceding month. We evaluated nutrient intake adequacy by comparing the self-reported intake with two indices of the dietary reference intakes for Japanese (2015): the estimated average requirement (EAR) of fourteen nutrients, and the ‘tentative dietary goal for preventing lifestyle-related diseases’ (DG) of seven nutrients. A total of 143 participants (25–44 years old) completed the questionnaires, with 32·9 % of participants reporting a weekly home cooking frequency of seven times/week. Women with a higher home cooking frequency (seven times/week) were more likely to have children (P = 0·001) than those with a lower home cooking frequency (0–6 times/week). Of the nutrients evaluated, there was no significant difference between the two groups in meeting EAR and DG. Our findings suggest that daily home cooking may not be necessary to achieve adequate nutrient intake, specifically among married, young-to-middle-aged Japanese women.

The triple-period (TP)-A and CuPt-A type ordering, which have been so far reported only for MBE grown alloys, were observed, in addition to CuPt-B type ordering, in Al0.5In0.5As alloys grown by MOVPE at 500°C. This indicates that (2×3) and (1×2) surface reconstructions occur on the surface even during MOVPE growth, although the (2×1) surface reconstruction and CuPt-B type ordering are dominant for the growth conditions examined.

For the crystal orientation control of multi-layered SOI (Silicon on Insulator) by the laser recrystallization technology, the shape and size of seeds were investigated. By utilizing dot seeds less than 3μm square instead of a line seed, the crystal orientation control of a SOI layer was successfully realized without causing evaporation of silicon. Moreover, the dot seed method enabled us to control the crystal orientation of multi-layered SOI by virtue of small heat flow through seed regions.

In the mean time, it was proved that the SOI crystal orientation gradually rotated as the crystal propagated away from the seeds and that the degree of rotation in the second SOI layer was smaller than that in the first one.