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In this work, the mechanical properties of cubic silicon carbide are explored through the analysis of the static and dynamic behavior of 3C-SiC cantilevers. The investigated structures were micro-machined using Inductively Coupled Plasma (ICP) etching of thin 3C-SiC films grown on silicon. The aim was to evaluate the influence of some basic parameters (film orientation, film thickness, defect density) on the mechanical properties of the material.
X-Ray Diffraction was used to evaluate the crystalline quality of the epilayers. Scanning Electron Microscopy observations of static cantilever deflection highlight the major difference between the stress states of (100) and (111) oriented layers for which the intrinsic stresses are of opposite signs. The cantilever deflection is highly dependent on the film thickness, as stated for (100) oriented epilayers. The lowest deflection is obtained for the thickest layer. The Young's modulus of 3C-SiC is calculated from the resonance frequency of clamped-free cantilevers, measured by laser Doppler vibrometry. The relatively low and orientation independent value of Young's modulus (~350GPa) found on the samples is probably associated with the high defect density usually observed in very thin 3C-SiC films grown on Si.
We present an experimental study of asymmetric wafer deformation for 3C-SiC layers grown on deliberately misorientated silicon substrates. An asymmetric curvature has been observed both on (100) and (111) oriented layers. In this work we focus on the (100) oriented samples. The curvature of the wafers is studied as a function of wafer thickness and offcut angle. We look for the correlations between the observed asymmetric strain relaxation and the layer morphology and microstructure. We claim that different defect pattern, measured along  and [1-10] direction can be at the origin of almost complete relaxation of mismatch strain along the offcut direction.
In this work, non-intentionally doped 3C-SiC epilayers were implanted using phosphorus at different energies and subsequently annealed at temperatures between 1100°C and 1350°C in order to form n+ implanted layers. Different techniques such as Fourier Transformed InfraRed spectroscopy (FTIR) and Secondary Ion Mass Spectroscopy (SIMS) were used to characterize implanted 3C-SiC epilayers after the different annealing steps. Successively, metal layers were sputtered in order to form the contacts. The specific contact resistance (ñC) was determined by using circular Transfer Length Method (c-TLM) patterns. Specific contact resistance values were investigated as a function of doping and contact annealing conditions and compared to those obtained for highly doped 3C-SiC epilayers. As expected, ñC value is highly sensitive to post-implantation annealing and metal contact annealing. This work demonstrates that low resistance values can be achieved using phosphorus implantation and, hence, enabling device processing.
In this work, we study cubic SiC/Si (111) templates as an alternative for growing GaN on silicon. We first developed the epitaxial growth of 3C-SiC films on 50mm Si(111) substrates using chemical vapor deposition. Then, AlGaN/GaN high electron mobility transistors were grown by molecular beam epitaxy on these templates. Both the structural quality and the behavior of transistors realized on these structures show the feasibility of this approach.
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