7 results
Realization of silicon nanopillar arrays with controllable sidewall profiles by holography lithography and a novel single-step deep reactive ion etching
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1258 / 2010
- Published online by Cambridge University Press:
- 01 February 2011, 1258-Q14-02
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- 2010
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Wafer-fused n-AlGaAs/p-GaAs/n-GaN Heterojunction Bipolar Transistor with uid-GaAs Base-Collector Setback
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- Journal:
- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y10.20
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- 2003
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The First Wafer-fused AlGaAs-GaAs-GaN Heterojunction Bipolar Transistor
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- Journal:
- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L12.10
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- 2002
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Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 8-13
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- 2000
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Effect Of AlGaN/GaN Strained Layer Superlattice Period On InGaN MQW Laser Diodes
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 14-19
- Print publication:
- 2000
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Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W1.3
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- 1999
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Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W1.4
- Print publication:
- 1999
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