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Realization of silicon nanopillar arrays with controllable sidewall profiles by holography lithography and a novel single-step deep reactive ion etching

Published online by Cambridge University Press:  01 February 2011

Yung-Jr Hung ,
San-Liang Lee ,
Brian J. Thibeault  and
Larry A. Coldren
Yung-Jr Hung
Affiliation:
d9502307@mail.ntust.edu.tw, National Taiwan University of Science and Technology, Department of Electronic Engineering, Taipei, Taiwan, Province of China
San-Liang Lee
Affiliation:
sllee@mail.ntust.edu.tw, National Taiwan University of Science and Technology, Department of Electronic Engineering, Taipei, Taiwan, Province of China
Brian J. Thibeault
Affiliation:
thibeault@ece.ucsb.edu, University of California at Santa Barbara, Department of Electrical and Computer Engineering, Santa Barbara, United States
Larry A. Coldren
Affiliation:
coldren@ece.ucsb.edu, University of California at Santa Barbara, Department of Electrical and Computer Engineering, Santa Barbara, United States
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Abstract

A simple and efficient approach for fabricating silicon nanopillar arrays with a high aspect ratio and controllable sidewall profiles has been developed by using holographic lithography and a novel single-step deep reactive ion etching. During the etching process, scalloping of the sidewalls can be avoided while reserving the high mask selectivity and high etching rate. Besides, the sidewall angle of resultant patterns can be adjusted by tuning the composition of the gas mixture of single-step DRIE process. We further fabricate a tapered silicon nanopillar array and observe its photonic bandgap property. We believe that the good optical performance of this tapered silicon nanopillar array realized by the proposed approach shows the promising of this process for various applications.

Keywords

reactive ion etchingnanostructureholography
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1258: Symposia P/Q/R – Low-Dimensional Functional Nanostructures-Fabrication, Characterization and Applications , 2010 , 1258-Q14-02
Copyright
Copyright © Materials Research Society 2010

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