When a drop is deposited on a superhydrophilic micropillar array, the upper part of the drop (referred to as the bulk) collapses while the bottom part penetrates into the gaps of the array, forming a fringe film. Here we quantify the early stage dynamics of this process using a combination of experiment and theory. We show that the circular front of the fringe film spreads like t1/2, t being time, when coupled to the bulk flow. However, the film is found to advance like t1/3 through faceted zippering in the absence of the bulk. We then show that the spreading of the bulk and the entire drop footprint follows a power law (t1/4) that is different from Washburn's law. This work can be a starting point to completely understand the spreading of liquids on superhydrophilic surfaces and opens questions specific to superwetting behaviour including the criteria to determine whether the fringe film will expand through lateral zipping or advance radially outwards.

W incorporated diamond-like carbon (W-DLC) films were deposited on silicon (100) wafers by a hybrid deposition method combining ion beam deposition of carbon with DC magnetron sputtering of tungsten. During the films deposition, a wide range of negative bias voltage from 0 to -600 V was applied. W concentration in the film could be controlled by varying the Ar/C6H6 ratio in the supplying gas. In the present experimental condition, WC1−x nano-sized particles were not observed in the amorphous carbon matrix. Regardless of the W concentration in the film, it was found that the G-peak position of the Raman spectra had a lowest value at a bias voltage of - 200 V, which represents the highest sp3 bond fraction in the film. The highest residual stress, hardness and Young's modulus were also observed when the bias voltage was -200 V. This result shows that the mechanical properties of W-DLC films were mainly dependent on the atomic bond structure of carbon. On the other hand, the electrical resistivity significantly decreased by the W incorporation.

We studied on the thermal annealing effect on the residual stress and the mechanical properties in thin compressive stressed diamond-like carbon film on Si substrate. Annealing experiments were carried out with Rapid Thermal Procedure system at 200–600 °C, and the stress change with annealing temperature was investigated by in-situ stress measurement system. The apparent stress reduction occurred with minimal structure changes. In order to measure the change of chemical structure of diamond-like carbon film by annealing, we used Raman spectrometer. The adhesion deterioration in interface has been detected as annealing temperature increased. In the compressive stressed DLC film, we observed the dramatic evolution of interface delamination at certain high temperature using in-situ heating stage built in Environment SEM. The quantitative change of adhesion affected by annealing process was also measured with scratch testing. For exploring the interface structure affected by the thermal annealing process at high temperature, the cross section of annealed film has been observed with HR TEM.

The morphology evolution of thin films was studied by molecular dynamics simulation. In this simulation four deposition and substrate elements combinations were used: Al on Al(001), Al on Co(001), Co on Co(001), Co on Al(001). The Al thin film was always grown by layer-bylayer mode regardless of substrates used. On the other hand, thin films formed by Co deposition depended on substrates used.While Co thin films on the Co substrates were grown by the island mode, a 3 monolayer (ML) thickness of CoAl surface compound was initially formed on Al substrate, before pure Co thin film growth occurred. In addition to the study on morphologies, the degrees of mixing of atoms in the interface were studied quantitatively. No surface mixing and a sharp interface were observed when Co was used as a substrate regardless of deposited atoms. On the contrary, a large amount of surface mixing or compound formation was observed when Al was used as a substrate.

Elastic modulus and Poisson's ratio of diamond-like carbon (DLC) film was measured by a simple method using DLC bridges which are free from mechanical constraint of substrate. The DLC films were deposited on Si wafer by C6H6r.f. glow discharge at the deposition pressure 1.33 Pa. Because of the high residual compressive stress of the film, the bridge exhibited a sinusoidal displacement by removing the constraint of the substrate. By measuring the amplitude with known bridge length, we could determine the strain of the film required to adhere to the substrate. Combined with independent stress measurement by laser reflection method, this method allows calculation of the biaxial elastic modulus, E/(1–v), where E is the elastic modulus and v Poisson's ratio of the DLC film. By comparing the biaxial elastic modulus with plane-strain modulus, E/(1–v2), measured by nano-indentation, we could further determine the elastic modulus and Poisson's ratio, independently. The elastic modulus, E, increased from 87 to 133 GPa as the negative bias voltage increased from 400 to 550 V. Poisson's ratio was estimated to be about 0.20 in this bias voltage range. For the negative bias voltages less than 400 V, however, the present method resulted in negative Poisson's ratio which is physically impossible. The limitation of the present method was also discussed.

A simple method to measure the elastic modulus and Poisson's ratio of diamond-like carbon (DLC) films deposited on Si wafer was suggested. This method involved etching a side of Si substrate using the DLC film as an etching mask. The edge of DLC overhang free from constraint of Si substrate exhibited periodic sinusoidal shape. By measuring the amplitude and the wavelength of the sinusoidal edge, we can determine the strain of the film required to adhere to the substrate. Combined with independent stress measurement by laser reflection method, this method allows calculation of the biaxial elastic modulus, E/(1 − v), where E is the elastic modulus and v Poisson's ratio of the DLC films. By comparing the biaxial elastic modulus with plane-strain modulus, E/(1 −v2), measured by nano-indentation, we could further determine the elastic modulus and Poisson's ratio, independently. This method was employed to measure the mechanical properties of DLC films deposited by C6H6 r.f. glow discharge at the deposition pressure 1.33 Pa. The elastic modulus, E, increased from 94 to 128 GPa as the negative bias voltage increased from 400 to 550 V. Poisson's ratio was estimated to be about 0.22 in this bias voltage range. For the negative bias voltages less than 400 V, however, the present method resulted in negative Poisson's ratio. The limitation of the present method was discussed.

Tribochemical reactions between Si incorporated diamond-like carbon (Si–DLC) films and steel ball were investigated during initial stage of tribo-test. The films were deposited by r.f.–PACVD using mixtures of diluted silane (SiH4:H2=10:90) and benzene gases. Si concentration in the film was varied from 0 to 10 at.% by adjusting the diluted silane fraction in the reaction gases. A rotating type ball-on-disk wear rig was employed for the tribo-test in ambient atmosphere. When the Si concentration was less than 5 at.%, initial transient period of high friction coefficient was commonly observed. After the transient period, the friction coefficient becomes lower with increasing contact cycles. The initial transient period becomes shorter and the starting and maximum friction coefficients in transient period decreased with increasing Si concentration. Composition of the debris on the wear scar surface was analyzed by Auger spectroscopy at various stages in the initial transient period. We observed that when the friction coefficient increased in earlier stage of the transient period, iron and oxygen was observed in the debris. However, decrease in the friction coefficient in the later stage of the transient period was associated with the formation of silicon rich oxide debris. This result supports the friction mechanism of Si-DLC films that the formation of Si rich oxide debris results in low friction coefficient in ambient atmosphere.

Nitrogen incorporated diamond-like carbon (DLC) films were deposited by r.f. plasma assisted chemical vapor deposition (r.f.-PACVD) method. Mixtures of benzene and ammonia or nitrogen were used as the reaction gases for the deposition. Composition, atomic bond structure and mechanical properties of the film were investigated when the fraction of nitrogen source increases from 0 to 0.79. All films were deposited at fixed negative bias voltage of the cathode (-500 V) and the deposition pressure (10 mTorr). While ammonia addition reduces both residual stress and hardness of the film from 1.7 to 1 GPa and from 2750 to 1700 Kgf/mm2 respectively, the mechanical properties are not significantly varied by nitrogen addition. Deposition rate, composition and atomic bond structure are also dependent on the nitrogen source gases. Observed behavior of mechanical properties is discussed in terms of the content of inter-links of sp2 clusters. In addition to hydrogen, C≡N bonds in the film are also terminated sites of three dimensional atomic bond network. By considering the hydrogen concentration and the C≡N bonds, it can be shown that the mechanical properties of nitrogen incorporated DLC films are determined by the content of inter-links of sp2 clusters.

In order to characterize friction and wear behavior between cylindrical specimens and flexible counterface materials such as magnetic tape, a tribometer is suggested. The tribometer is used to investigate the behavior between video cassette recorder (VCR) head drums and VCR tapes. Friction coefficients of uncoated and diamond-like carbon (DLC) film coated head drums of Al alloy are compared before and after a wear test. Before the wear test, an uncoated head drum shows friction coefficients ranging from 0.22 to 0.3 as the applied tension increases from 200 to 600 gf at the sliding speed of 0.16 m/s. The friction coefficients of DLC coated head drum are 14 to 30 % lower than those of uncoated head drums. At the sliding speed of 4.9 m/s, the friction coefficients of both uncoated and DLC coated drums are reduced to less than 0.1. After the wear test, however, the friction coefficients of uncoated head drums increase to the range from 0.3 and 0.47 depending on the applied tensions. Furthermore, the friction coefficients are not reduced even at the high sliding speed of 4.9 m/s. DLC coated head drums, on the other hand, exhibit similar friction coefficients to those before the wear test. Degradation of frictional property in the uncoated head drum is discussed in terms of the surface damages mainly due to magnetic metal oxide particles transferred from VCR tapes. This result shows that the DLC coating of VCR head drum can improve the friction and wear properties. It is also observed that the DLC coating can reduce the damage of VCR tapes.

Residual compressive stress of diamond-like carbon (DLC) films was measured by beam deflection method. DLC films were deposited on thin Si wafers using r.f. plasma decomposition of methane and benzene. Negative bias voltage of the cathode was varied from -100 to -800 V and deposition pressure from 3 to 100 mTorr. When using benzene as precursor gas, the residual stress monotonically increases as increasing . (Here, Vb is the negative bias voltage of cathode and P the deposition pressure.) In case of using methane, however, the residual stress has a maximum value at between 70 and 100 V/mTorr1/2. Because of the difference in molecular size between benzene and methane, the mean free path of ions in benzene discharge is 5 times shorter than that in methane discharge. The contrasting behavior of residual stress is discussed in terms of the difference in ion energies at the specimen surface due to the difference in mean free path. On the other hand, total hydrogen concentration decreases as increasing in both cases. This result thus shows that the total hydrogen concentration cannot be a key to understand the behavior of residual stress.

The congruent melting point, or To curve, of crystalline Si-As alloys has been measured in the range of 1.6 to 18.1 at. % arsenic by line source electron beam annealing. Alloys were created by ion implantation of As into 0.1mm Si-on-sapphire and crystallized by pulsed laser melting. To temperatures decrease from 1673±10K at 2.0 at.% As to 1516±30K at 18.1 at.% As. The results of these measurements are significantly higher than the previous results of studies using pulsed laser melting techniques. Advantages of the e-beam technique over previous techniques are discussed. Chemical free energy functions of the solid and liquid phases were calculated from existing thermodynamic data. The calculated To curve agrees with the measured values only in low concentration region (less than 8 at.%).