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Structure and Mechanical Properties of Nitrogen Incorporated Diamond-Like Carbon Films

Published online by Cambridge University Press:  21 February 2011

Kwang Yong Eun
Affiliation:
Division of Ceramics, Korea Institute of Science and Technology, P. 0. Box 131, Cheongryang, Seoul, Korea
Jae-Seong Rhee
Affiliation:
Advanced Analysis Center, Korea Institute of Science and Technology, P. 0. Box 131, Cheongryang, Seoul, Korea
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Abstract

Nitrogen incorporated diamond-like carbon (DLC) films were deposited by r.f. plasma assisted chemical vapor deposition (r.f.-PACVD) method. Mixtures of benzene and ammonia or nitrogen were used as the reaction gases for the deposition. Composition, atomic bond structure and mechanical properties of the film were investigated when the fraction of nitrogen source increases from 0 to 0.79. All films were deposited at fixed negative bias voltage of the cathode (-500 V) and the deposition pressure (10 mTorr). While ammonia addition reduces both residual stress and hardness of the film from 1.7 to 1 GPa and from 2750 to 1700 Kgf/mm2 respectively, the mechanical properties are not significantly varied by nitrogen addition. Deposition rate, composition and atomic bond structure are also dependent on the nitrogen source gases. Observed behavior of mechanical properties is discussed in terms of the content of inter-links of sp2 clusters. In addition to hydrogen, C≡N bonds in the film are also terminated sites of three dimensional atomic bond network. By considering the hydrogen concentration and the C≡N bonds, it can be shown that the mechanical properties of nitrogen incorporated DLC films are determined by the content of inter-links of sp2 clusters.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

1. Angus, J. C., Koidl, P. and Domitz, S., in Plasma Deposited Thin Films, edited by Mort, J. and Jansen, F. (CRC, Boca Raton, FL, 1986), p. 89.Google Scholar
2. Robertson, J., Adv. Phys., 35, 317 (1986).Google Scholar
3. Robertson, J. and O’Reilly, E. P., Phys. Rev., B 35, 2946 (1987).Google Scholar
4. Angus, J. C. and Jansen, F., J. Vac. Sci. Technol., A 6, 1778 (1988).Google Scholar
5. Amir, O. and Kalish, R., J. Appl. Phys., 79, 4958 (1991).Google Scholar
6. Kaufman, J. H. and Metin, S., Phys. Rev., B 39, 13053 (1989).Google Scholar
7. Han, H-X. and Feldman, B. J., Solid State Communications, 9, 921 (1988).Google Scholar
8. Doll, J. H., Heremans, J. P., Perry, T. A. and Mantese, J. V., J. Mater. Res., 9, 85 (1994).Google Scholar
9. Seth, J., Ward, A. J. I. and Babu, S. V., Appl. Phys. Lett., 60, 1957 (1992).Google Scholar
10. Seth, J., Padiyath, R. and Babu, S. V., Diamond and Related Materials, 3, 210 (1994).Google Scholar
11. Grill, A. and Patel, V., Diamond Films and Technology, 2, 61 (1992).Google Scholar
12. Franceschini, D. F., Achete, C. A. and Freire, F. L. Jr, Appl. Phys. Lett., 60, 3229 (1992).Google Scholar
13. Metin, S., Kaufman, J. H., Saperstein, D. D., Scott, J. C., Heyman, J. and Haller, E. E., J. Mater. Res., 9, 396 (1994).Google Scholar
14. Lee, K.-R. and Eun, K. Y., in Proceedings of the 4th International Conference on the New Diamond Science and Technology, edited by Saito, S., Fujimori, N., Fukunaga, O., Kamo, M., Kobashi, K. and Yoshikawa, M. (MYU, Tokyo, Japan, 1994), p. 611.Google Scholar
15. Schwan, J., Dworschak, W., Jung, K. and Ehrhardt, H., Diamond and Related Materials, 3, 1034 (1994).Google Scholar
16. Liu, A. Y. and Cohen, M. L., Phys. Rev., B 41, 10727 (1990).Google Scholar
17. Lee, K.-R., Baik, Y.-J. and Eun, K. Y., Diamond and Related Materials, 2, 218 (1993).Google Scholar