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Single photon sources (SPS) are an important building block for realizing quantum technologies for computing, communication, and sensing. For industrialization, electrically controllable color centers acting as SPS are required. We have demonstrated the creation of electrically controllable silicon vacancies (VSis) in the SiC pn junction diode fabricated by proton beam writing (PBW). PBW was successfully used to introduce electrically controllable VSi without degradation of the diode performance. The dependence of the electroluminescence (EL) and photoluminescence (PL) intensities from VSi on H+ fluence revealed that the emission efficiency of EL is less than that of PL. For EL, the supply of carriers (electrons and/or holes) was restricted due to the resistive region around each VSi introduced by PBW. The results suggest that further improvement in the VSi creation process without defects acting as majority carrier removal centers (highly resistive region) and nonradiative centers by optimization of PBW conditions are key points to realize highly sensitive quantum sensors using VSi.
Reduction in background carrier concentration has been investigated for 4H-SiC C-face epitaxial growth in order to be applied for ultra-high voltage power devices. Optimizing epitaxial growth parameters made it possible to achieve 7.6x1013 cm-3 as the background carrier concentration within a whole area of specular 3-inch wafers. In addition to the background carrier concentration reduction, epitaxial film thickness variation, surface defect density and the carrier lifetime have been confirmed to fulfill the requirements for the devices.
Formation of interfacial dislocations (IDs) and dislocation half-loop arrays (HLAs) and their appearance in 4H-SiC epi-wafers are investigated by X-ray topography and KOH etching analysis. Synchrotron reflection X-ray topography demonstrates the ability to image IDs and HLAs simultaneously and reveal their densities as well as spatial distributions in the epi-wafers. The vertical location of IDs in the epi-wafer is also examined by this technique. The influence of wafer warp, in-situ H2 etching prior to epitaxial growth, substrate off-angle as well as the growth face (Si-face and C-face) on the densities and spatial distributions of IDs and HLAs are discussed.
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