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This study aimed to investigate the influences of age, education, and gender on the two total scores (TS-I and TS-II) of the Consortium to Establish a Registry for Alzheimer's Disease Neuropsychological assessment battery (CERAD-NP) and to provide normative information based on an analysis for a large number of elderly persons with a wide range of educational levels.
In the study, 1,987 community-dwelling healthy volunteers (620 males and 1,367 females; 50–90 years of age; and zero to 25 years of education) were included. People with serious neurological, medical, and psychiatric disorders (including dementia) were excluded. All participants underwent the CERAD-NP assessment. TS-I was generated by summing raw scores from the CERAD-NP subtests, excluding Mini-Mental State Examination and Constructional Praxis (CP) recall subtests. TS-II was calculated by adding CP recall score to TS-I.
Both TS-I and TS-II were significantly influenced by demographic variables. Education accounted for the greatest proportion of score variance. Interaction effect between age and gender was found. Based on the results obtained, normative data of the CERAD-NP total scores were stratified by age (six overlapping tables), education (four strata), and gender.
The normative information will be very useful for better interpretation of the CERAD-NP total scores in various clinical and research settings and for comparing individuals’ performance of the battery across countries.
The growth behaviour of carbon nanotubes on the Fe-deposited Si (001) substrates by thermal chemical vapor deposition (CVD) has been investigated using transmission electron microscopy (TEM), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The Fe films are deposited for 20 s–20 min by pulse-laser deposition. SEM results show that the growth characteristics of carbon nanotubes strongly depend on the Fe film deposition time. TEM and SEM results show that the pretreatment annealing at 800 °C causes the continuous Fe films to be broken up into nanoparticles 8–50 nm across and discontinuous islands 100 nm– 1.1 μm in size. It is shown that the Fe nanoparticles are essentially required for the formation of aligned carbon nanotubes. SEM results show that the growth behaviors of carbon nanotubes are strongly dependent on the pretreatment atmospheres. In addition, for the Ar gas-pretreated sample, a carbonaceous layer is formed near the surface region. TEM results show direct evidence that a base growth mode is responsible for the growth of carbon nanotubes in the present work. Based on the microscopy results, the pretreatment condition dependence of the growth behaviors of carbon nanotubes is discussed.
The good field-emission properties of carbon nanotubes coupled with their high mechanical strength, chemical stability, and high aspect ratio, make them ideal candidates for the construction of efficient and inexpensive field-emission electronic devices. The fabrication process reported here has considerable potential for use in the development of integrated radio frequency amplifiers or field emission-controllable cold electron guns for field emission displays. This fabrication process is compatible with currently used semiconductor processing technologies. Micropatterned vertically aligned carbon nanotubes were grown on planar Si surface or inside the trenches, using chemical vapor deposition, photolithography, pulsed-laser deposition, reactive ion etching, and the lift-off method. To control the field-emission current by a 3rd electrode, the gate electrode, we grew carbon nanotubes inside the trenches. This triode-type structure is the best to realize the gray-scale carbon nanotube field emission. This carbon nanotube fabrication process can be widely applied for the development of electronic devices using carbon nanotube field emitters as cold cathodes and could revolutionize the area of field-emitting electronic devices such as RF amplifiers and field emission displays.
We have grown well-aligned carbon nanotube arrays by thermal chemical vapor deposition at 800°C on Fe nanoparticles deposited by a pulsed laser on a porous Si substrate. Porous Si substrates were prepared by the electrochemical etching of p-Si(100) wafers with resistivities of 3 to 6 ωcm. These well-aligned carbon nanotube field emitter arrays are suitable for electron emission applications such as cold-cathode flat panel displays and vacuum microelectronic devices like microwave power amplifier tubes. Field emission characterization has been performed on the CNT-cathode diode device at room temperature and in a vacuum chamber below 10−6 Torr. The anode is maintained at a distance of 60[.proportional]m away from the carbon nanotube cathode arrays through an insulating spacer of polyvinyl film. The measured field emitting area is 4.0×10−5cm2. Our carbon nanotube field emitter arrays emit 1mA/cm2at the electric field, 2V/[.proportional]m. And they emit a large current density as high as 80mA/cm2 at 3V/[.proportional]m. The open tip structure of our carbon nanotubes and their good adhesion through Fe nanoparticles to the Si substrate are part of the reason why we can attain a large field emission current density within a low field. The field emitter arrays in our diode device are vertically well-aligned carbon nanotubes on the Si-wafer substrate.
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