To save content items to your account,
please confirm that you agree to abide by our usage policies.
If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account.
Find out more about saving content to .
To save content items to your Kindle, first ensure firstname.lastname@example.org
is added to your Approved Personal Document E-mail List under your Personal Document Settings
on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part
of your Kindle email address below.
Find out more about saving to your Kindle.
Note you can select to save to either the @free.kindle.com or @kindle.com variations.
‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi.
‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.
In this work, thin films of Indium Tin Oxide (ITO)-based materials were tested as potential candidates for mid-IR transparent contacts on Te-doped GaSb and Si-doped InAs semiconductor wafers. Since these contacts are devoted to be inserted in Sb-based devices which are generally MBE-grown at ∼450°C, low-temperature fabrication processes were particularly tested with a maximum temperature of annealing of 400°C. 50 nm-thick ITO films were deposited on glass, Te-doped GaSb and Si-doped InAs wafers and resistivity of 8.10−4 Ω.cm combined with ∼80% of transmittance at 2 μm and ohmic contacts with a specific resistance of 3.10−4 Ω.cm2 were obtained. Then, in order to improve these properties in the mid-IR, other ITO-based materials were tested: In doped ZnO (IZO) and Zn doped ITO (ITZO). The first results obtained on these materials show that the insertion of 10% of Zn in classical ITO structure results in a degradation of the electrical properties of the layer without a real impact on its optical transmittance near 2 μm. Concerning IZO, a large improvement of the transmittance in the whole visible-mid-IR wavelength range was observed for annealed samples at a temperature as low as 350°C. However, the electrical resistivity appears very sensible to the temperature of annealing.
Email your librarian or administrator to recommend adding this to your organisation's collection.