The goal in Rapid Thermal Processing is the realization of homogeneous and stable temperature distribution across the wafer.
Due to the wafer edge an additional heat loss occurs, which leads to temperature decrease near the wafer boundary. This can be the origin for layer thickness inhomogenities and defect generation. For successful compensation it is necessary to know why such a temperature gradient exists.
The heat transfer at the wafer edge was investigated by using computer simulation.
The results confirmed by experimental data in the pressure range of 1.. 760 Torr are discussed and criteria for the compensation of the temperature gradient near the wafer edge are developed.