To save content items to your account,
please confirm that you agree to abide by our usage policies.
If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account.
Find out more about saving content to .
To save content items to your Kindle, first ensure firstname.lastname@example.org
is added to your Approved Personal Document E-mail List under your Personal Document Settings
on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part
of your Kindle email address below.
Find out more about saving to your Kindle.
Note you can select to save to either the @free.kindle.com or @kindle.com variations.
‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi.
‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.
Low-energy N2+ molecular-ions were irradiated during the epitaxial growth of GaAs. Ion acceleration energy and ion beam current density were varied in the range of 30-200 eV and 3-37 nA/cm2, respectively. GaAs growth rate was kept constant at 1µm/ h and the thickness of N-doped GaAs layer was about 1 µm. N concentration was obtained by using secondary ion mass spectroscopy. Strong N-related emissions were observed in the low-temperature photoluminescence spectra, which indicates that N atom is efficiently substituted at As site and is optically active as an isoelectronic impurity
The role of hydrogen (H) in carbon (C)-doped GaAs was examined by co-doping of C and H atoms using low-energy hydrocarbon (CH+ and CH3+) ions. Experiments were carried out using the combined ion beam and molecular beam epitaxy (CIBMBE) system. Samples were characterized by low-temperature photoluminescence at 2K and Hall effect measurements at room temperature. Results show that incorporated C atoms are optically and electrically activated as acceptors even by hydrocarbon ion impingement. The effect of H incorporation was found to be noticeable when impinged current density of CH3+ ion beam is high that produces equivalent net hole carrier concentration greater than ∼1018 cm−3
Email your librarian or administrator to recommend adding this to your organisation's collection.