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Large-area vertically aligned silicon nanowire (Si NW) arrays were synthesized with a controlled length (0.3 ˜ 9 μm) by the chemical etching of n-type silicon substrates. Upon their excitation using a fs Ti-sapphire laser pulse (800 nm), their THz emission intensity exhibits strong dependence on their length; the intensity increases sharply up to a length of 3 μm and then decreases slightly, due to the complete absorption of the optical pump power. The Raman scattering spectrum exhibits the same behavior as that of the THz emission. We suggest that the field enhancement by localized surface plasmons induces more efficient THz emission or Raman scattering for the longer Si NWs. The photocurrent measured in a photoelectrochemical cell showed consistently the length dependence with a maximum value at the length of 5 μm.
High-density TiO2-CdS and ZnO-CdS core-shell nanocable arrays were synthesized on large-area Ti substrates. The CdS layers were deposited on the pre-grown vertically-aligned TiO2 (rutile) and ZnO nanowire arrays, with a controlled thickness (10~50 nm), using the vapor transport method. The ZnO-CdS nanocables consisted of single-crystalline wurtzite CdS shells whose  direction was aligned along the  wire axis of the wurtzite ZnO core, which is distinctive from the polycrystalline shell of the TiO2-CdS nanocables. We fabricated the photoelectrochemical cell using the ZnO-CdS photoelectrode exhibits much more efficient hydrogen generation than that using the TiO2-CdS one.
Single-crystalline rock-salt PbS nanowires (NWs) were synthesized using three different routes; the solvothermal, chemical vapor transport, and gas-phase substitution reaction of pre-grown CdS NWs. They were uniformly grown with the  or ,  direction in a controlled manner. In the solvothermal growth, the oriented attachment of the octylamine (OA) ligands enables the NWs to be produced with a controlled morphology and growth direction. As the concentration of OA increases, the growth direction evolves from the  to the higher surface-energy  and  directions. In the synthesis involving chemical vapor transport and the substitution reaction, the use of a lower growth temperature causes the higher surface-energy growth direction to change from  to . We fabricated field effect transistors using single PbS NW, which showed intrinsic p-type semiconductor characteristics for all three routes. For the PbS NW with a thinner oxide layer, the carrier mobility was measured to be as high as 10 cm2V−1s−1.
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