3 results
Long-Term Characterization of 6H-SiC Transistor Integrated Circuit Technology Operating at 500 °C
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1069 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1069-D11-02
- Print publication:
- 2008
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Control of Trenching and Surface Roughness in Deep Reactive Ion Etched 4H and 6H SiC
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- Journal:
- MRS Online Proceedings Library Archive / Volume 911 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0911-B10-15
- Print publication:
- 2006
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Confinement of Screw Dislocations to Predetermined Lateral Positions in (0001) 4H-SiC Epilayers Using Homoepitaxial Web Growth
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- Journal:
- MRS Online Proceedings Library Archive / Volume 742 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, K5.2
- Print publication:
- 2002
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