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Long-Term Characterization of 6H-SiC Transistor Integrated Circuit Technology Operating at 500 °C

Published online by Cambridge University Press:  01 February 2011

Philip Neudeck ,
David J. Spry ,
Liang-Yu Chen ,
Carl W. Chang ,
Glenn M. Beheim ,
Robert S. Okojie ,
Laura J. Evans ,
Roger D. Meredith ,
Terry L. Ferrier  and
Michael J. Krasowski
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Philip Neudeck
Affiliation:
Neudeck@nasa.gov, NASA Glenn Research Center, Sensors and Electronics Branch, 21000 Brookpark Road, M.S. 77-1, Cleveland, OH, 44135, United States
David J. Spry
Affiliation:
David.J.Spry@nasa.gov, OAI, NASA Glenn, 21000 Brookpark Road, M.S. 77-1, Cleveland, OH, 44135, United States
Liang-Yu Chen
Affiliation:
liangyu.chen-1@nasa.gov, OAI, NASA Glenn, 21000 Brookpark Road, M.S. 77-1, Cleveland, OH, 44135, United States
Carl W. Chang
Affiliation:
Carl.W.Chang@nasa.gov, ASRC, NASA Glenn, 21000 Brookpark Road, M.S. 77-1, Cleveland, OH, 44135, United States
Glenn M. Beheim
Affiliation:
Glenn.M.Beheim@nasa.gov, NASA Glenn Research Center, 21000 Brookpark Road, M.S. 77-1, Cleveland, OH, 44135, United States
Robert S. Okojie
Affiliation:
Robert.S.Okojie@nasa.gov, NASA Glenn Research Center, 21000 Brookpark Road, M.S. 77-1, Cleveland, OH, 44135, United States
Laura J. Evans
Affiliation:
Laura.J.Evans@nasa.gov, NASA Glenn Research Center, 21000 Brookpark Road, M.S. 77-1, Cleveland, OH, 44135, United States
Roger D. Meredith
Affiliation:
Roger.D.Meredith@nasa.gov, NASA Glenn Research Center, 21000 Brookpark Road, M.S. 77-1, Cleveland, OH, 44135, United States
Terry L. Ferrier
Affiliation:
Terry.L.Ferrier@nasa.gov, NASA Glenn Research Center, 21000 Brookpark Road, M.S. 77-1, Cleveland, OH, 44135, United States
Michael J. Krasowski
Affiliation:
Michael.J.Krasowski@nasa.gov, NASA Glenn Research Center, 21000 Brookpark Road, M.S. 77-1, Cleveland, OH, 44135, United States
Norman F. Prokop
Affiliation:
Norman.F.Prokop@nasa.gov, NASA Glenn Research Center, 21000 Brookpark Road, M.S. 77-1, Cleveland, OH, 44135, United States
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Abstract

NASA has been developing very high temperature semiconductor integrated circuits for use in the hot sections of aircraft engines and for Venus exploration. This paper reports on long-term 500 °C electrical operation of prototype 6H-SiC integrated circuits based on epitaxial 6H-SiC junction field effect transistors (JFETs). As of this writing, some devices have surpassed 4000 hours of continuous 500 °C electrical operation in oxidizing air atmosphere with minimal change in relevant electrical parameters.

Keywords

microelectronicssemiconductingelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1069: Symposium D – Silicon Carbide 2008—Materials, Processing and Devices , 2008 , 1069-D11-02
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1. Neudeck, P. G., Okojie, R. S., and Chen, L.-Y., Proc. IEEE 90, 1065 (2002).Google Scholar
2..McCluskey, F. P., Grzybowski, R., Podlesak, T., High Temperature Electronics.(CRC Press, New York, 1997).Google Scholar
3..Spry, D. J., et al., Proc. 2004 IMAPS Int. High Temp. Electronics Conf., Santa Fe, NM, p. WA1.Google Scholar
4..Chen, L. Y., Spry, D. J., and Neudeck, P. G., Proc. 2006 IMAPS Int. High Temp. Electronics Conf., Santa Fe, NM, p. 240.Google Scholar
5..Neudeck, P. G., et al., Mater. Sci. Forum 556-557, p. 831 (2007).Google Scholar
6..Spry, D. J., et al., Mater. Sci. Forum (2008) (in press).Google Scholar
7..Neudeck, P. G., et al., IEEE Electron Dev. Lett. (2008) (in press).Google Scholar
8..Neudeck, P. G., et al., manuscript in preparation for submission to IEEE Trans. Electron Devices.Google Scholar
9..Ohshima, T., et al., Physica B 308-310, 652 (2001).Google Scholar
10. Okojie, R. S., et al., Appl. Phys. Lett. 79, 3056 (2001).Google Scholar
11. Powell, J. A., Larkin, D. J., and Trunek, A. J., Mater. Sci. Forum 264-268, pp. 421 (1998).Google Scholar
12. Neudeck, P. G., Beheim, G. M., and Salupo, C. S., 2000 Government Microcircuit Applications Conference Technical Digest, Anahiem, CA, p. 421.Google Scholar
13. Dabiran, A. M., et al., Proc. 2006 IMAPS Int. High Temp. Electronics Conf., Santa Fe, NM, p. 329.Google Scholar
14. Okojie, R. S., Lukco, D., Chen, Y. L., and Spry, D. J., J. Appl. Phys. 91, 6553 (2002).Google Scholar
15.Cree, Inc., http://www.cree.comGoogle Scholar