13 results
Laser irradiation influence on Si/3C-SiC/Si heterostructures for subsequent 3C-SiC membrane elaboration
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- Journal:
- MRS Advances / Volume 1 / Issue 54 / 2016
- Published online by Cambridge University Press:
- 10 May 2016, pp. 3649-3654
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- 2016
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Defects Induced by Helium Implantation: Impact on Boron Diffusivity
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- Journal:
- MRS Online Proceedings Library Archive / Volume 864 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, E7.4
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- 2005
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Impact of Hydrogen Plasma Treatment on Gettering by He Implantation-Induced Cavities in Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 813 / 2004
- Published online by Cambridge University Press:
- 17 March 2011, H4.2
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- 2004
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Impact of gettering by helium implantation on boron and iron segregation
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- Journal:
- The European Physical Journal - Applied Physics / Volume 23 / Issue 1 / July 2003
- Published online by Cambridge University Press:
- 27 June 2003, pp. 41-44
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- July 2003
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The role of a top oxide layer in cavities formed by MeV He implantation into Si
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- The European Physical Journal - Applied Physics / Volume 23 / Issue 1 / July 2003
- Published online by Cambridge University Press:
- 12 June 2003, pp. 45-48
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- July 2003
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Defects Induced by Helium Implantation: Interaction with Boron and Phosphorus
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- Journal:
- MRS Online Proceedings Library Archive / Volume 719 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, F4.3
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- 2002
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Dopant - Extended Defects Interactions: The Case of Aluminum
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- Journal:
- MRS Online Proceedings Library Archive / Volume 610 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, B6.4
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- 2000
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Electrical Active Defects in the Band-Gap Induced by Ge-Preamorphization of Si-Substrates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 532 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 85
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- 1998
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Boron Ted in Pre-Amorphised SI: Role of the A/C Interface
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- MRS Online Proceedings Library Archive / Volume 532 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 55
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- 1998
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On the «A Symmetrical» Behavior of Transient Enhanced Diffusion in Pre-Amorphised SI Wafers
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- MRS Online Proceedings Library Archive / Volume 532 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 67
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- 1998
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Electrical Defects of Shallow (P+/N) Junctions Formed by Boron Implantation into Ge-Preamorphized Si-Substrates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 469 / 1997
- Published online by Cambridge University Press:
- 15 February 2011, 413
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- 1997
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Transient Enhanced Diffusion of Dopants in Preamorphised Si Layers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 439 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 11
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- 1996
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Transient Enhanced Diffusion of Dopants in Preamorphised Si Layers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 438 / 1996
- Published online by Cambridge University Press:
- 03 September 2012, 3
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- 1996
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