Hostname: page-component-848d4c4894-v5vhk Total loading time: 0 Render date: 2024-07-03T11:58:12.816Z Has data issue: false hasContentIssue false

Laser irradiation influence on Si/3C-SiC/Si heterostructures for subsequent 3C-SiC membrane elaboration

Published online by Cambridge University Press:  10 May 2016

J.F. Michaud*
Affiliation:
Université François Rabelais, Tours, GREMAN, CNRS-UMR 7347, 16 rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2, France
R. Khazaka
Affiliation:
Université François Rabelais, Tours, GREMAN, CNRS-UMR 7347, 16 rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2, France CRHEA, CNRS-UPR10, rue Bernard Gregory, 06560 Valbonne, France
M. Portail
Affiliation:
CRHEA, CNRS-UPR10, rue Bernard Gregory, 06560 Valbonne, France
G. Andrä
Affiliation:
Leibniz Institute of Photonic Technology, Albert-Einstein-Str. 9, 07745 Jena, Germany
J. Bergmann
Affiliation:
Leibniz Institute of Photonic Technology, Albert-Einstein-Str. 9, 07745 Jena, Germany
D. Alquier
Affiliation:
Université François Rabelais, Tours, GREMAN, CNRS-UMR 7347, 16 rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2, France
Get access

Abstract

The cubic polytype of silicon carbide is a stimulating candidate for Micro-Electro-Mechanical-Systems (MEMS) applications due to its interesting physical and chemical properties. Recently, we demonstrated the possibility to elaborate 3C-SiC membranes on 3C-SiC pseudo-substrates, using a silicon epilayer grown by Low Pressure Chemical Vapor Deposition as a sacrificial layer. Such structures could be the starting point for the elaboration of new MEMS devices. However, the roughness still represents a major concern. Therefore, in this contribution, we investigate the influence of an excimer laser irradiation on the Si epilayer surface prior to the 3C-SiC epilayer growth. We compare these results with the 3C-SiC epilayer grown directly on the as-grown Si epilayer.

Type
Articles
Copyright
Copyright © Materials Research Society 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Silicon Carbide (SiC) Microelectromechanical Systems (MEMS) for Harsh Environments, edited by Cheung, R., Imperial College Press, 2006.Google Scholar
Zorman, C.A. and Parro, R.J., Physica Status Solidi (b) 245(7), 1404 (2008).CrossRefGoogle Scholar
Michaud, J.F., Portail, M. and Alquier, D., 3C-SiC: from electronic to MEMS devices in Advanced Silicon Carbide Devices and Processing, Edited by Stephen, E. Saddow and Francesco La Via, InTech (2015).Google Scholar
Mehregany, M. and Zorman, C.A., Thin Solid Films 355-356, 518 (1999).Google Scholar
Sarro, P.M., Sensors and Actuators 82, 210 (2000).Google Scholar
Daulton, T., Bernatowicz, T., Lewis, R., Messenger, S., Stadermann, F. and Amari, S., Science 296 (2002) 1852.Google Scholar
Song, X., Michaud, J.F., Cayrel, F., Zielinski, M., Portail, M., Chassagne, T., Collard, E. and Alquier, D., Applied Physics Letters 96, 142104 (2010).CrossRefGoogle Scholar
Jiang, L. and Cheung, R., International Journal of Computational Materials Science and Surface Engineering 2(3-4), 225 (2009).Google Scholar
Mastropaolo, E. and Cheung, R., Materials Science Forum 711, 43 (2011).Google Scholar
Boubekri, R., Cambril, E., Couraud, L., Bernardi, L., Madouri, A., Portail, M., Chassagne, T., Moisson, C., Zielinski, M., Jiao, S., Michaud, J.-F., Alquier, D., Bouloc, J., Nony, L., Bocquet, F., Loppacher, C., Martrou, D. and Gauthier, S., Journal of Applied Physics 116, 054304 (2014).CrossRefGoogle Scholar
Saddow, S. E., Silicon carbide biotechnology: a biocompatible semiconductor for advanced biomedical devices and applications. Elsevier Science (2011).CrossRefGoogle Scholar
Khazaka, R., Portail, M., Vennéguès, P., Alquier, D. and Michaud, J.F., Acta Materialia 98, 336 (2015).Google Scholar
Khazaka, R., Grundmann, M., Portail, M., Vennéguès, P., Zielinski, M., Chassagne, T., Alquier, D., Michaud, J.F, Applied Physics Letters 108, 011608 (2016).Google Scholar
Michaud, J.F., Portail, M., Chassagne, T., Zielinski, M. and Alquier, D., Microelectronic Engineering 105, 65 (2013).Google Scholar
Khazaka, R., Bahette, E., Portail, M., Alquier, D. and Michaud, J.F., Materials Letters 160, 28 (2015).CrossRefGoogle Scholar
Sinh, N.D., Andrä, G., Falk, F., Ose, E., Bergmann, J., Solar Energy Materials and Solar Cells 74, 295 (2002).CrossRefGoogle Scholar