6 results
Picosecond Photoinduced Reflectivity Studies of GaN Prepared by Lateral Epitaxial Overgrowth
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 782-788
- Print publication:
- 2000
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Mg Segregation, Difficulties of P-Doping in GaN
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 500-506
- Print publication:
- 2000
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Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin AlxGa1−xN Layers Grown by MOCVD
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 294-300
- Print publication:
- 2000
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Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin AlxGa1-xN Layers Grown by MOCVD.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W3.77
- Print publication:
- 1999
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Mg Segregation, Difficulties of P-Doping in GaN
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W9.7
- Print publication:
- 1999
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Picosecond Photoinduced Reflectivity Studies of GaN Prepared by Lateral Epitaxial Overgrowth
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.55
- Print publication:
- 1999
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- Article
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