3 results
Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diode
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- Journal:
- The European Physical Journal - Applied Physics / Volume 55 / Issue 3 / September 2011
- Published online by Cambridge University Press:
- 18 August 2011, 30101
- Print publication:
- September 2011
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Parasitic effects and traps in AlGaN/GaN HEMT on sapphire substrate
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- Journal:
- The European Physical Journal - Applied Physics / Volume 51 / Issue 1 / July 2010
- Published online by Cambridge University Press:
- 24 June 2010, 10304
- Print publication:
- July 2010
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LP-MOCVD growth of GaAlN/GaN heterostructures on Silicon Carbide. Application to HEMT's devices.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y10.26
- Print publication:
- 2003
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