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Parasitic effects and traps in AlGaN/GaN HEMT on sapphire substrate

Published online by Cambridge University Press:  24 June 2010

O. Fathallah ,
M. Gassoumi ,
B. Grimbert ,
C. Gaquière  and
H. Maaref
O. Fathallah
Affiliation:
Laboratoire de Micro-Optoélectroniques et Nanostructures, Faculté des Sciences de Monastir, Avenue de l'Environnement, 5000 Monastir, Tunisia
M. Gassoumi*
Affiliation:
Laboratoire de Micro-Optoélectroniques et Nanostructures, Faculté des Sciences de Monastir, Avenue de l'Environnement, 5000 Monastir, Tunisia
B. Grimbert
Affiliation:
Institut d'Électronique de Microélectronique et de Nanotechnologie IEMN (TIGER), Département hyperfréquences et Semiconducteurs, Université des Sciences et Technologies de Lille, Avenue Poincaré, 59652 Villeneuve d'Ascq Cedex, France
C. Gaquière
Affiliation:
Institut d'Électronique de Microélectronique et de Nanotechnologie IEMN (TIGER), Département hyperfréquences et Semiconducteurs, Université des Sciences et Technologies de Lille, Avenue Poincaré, 59652 Villeneuve d'Ascq Cedex, France
H. Maaref
Affiliation:
Laboratoire de Micro-Optoélectroniques et Nanostructures, Faculté des Sciences de Monastir, Avenue de l'Environnement, 5000 Monastir, Tunisia
*
gassoumimalek@yahoo.fr
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Abstract

AlGaN/GaN high electron mobility transistors (HEMTs) with sapphire (Al2O3) substrates reveal anomalies like kink effect, current collapse, hysteresis phenomena on Ids-Vds and Ids-Vgs. These parasitic effects can be attributed to the presence of traps in the hetero-structure. Deep defects analysis was performed by conductance deep level transient spectroscopy (CDLTS) under drain pulse. Four electron traps have been detected with activation energy and capture cross-section of 2.62 eV, 1.18 eV, 0.97 eV, 0.48 eV, σn = 2.4 × 10-17 cm2 and σn = 2.37 × 10-14 cm2, σn = 2 × 10-12 cm2 and σn = 4.67 × 10-14 cm2 respectively. The localisation and the identification of these traps have occurred and a correlation between defects and parasitic effects has been discussed.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 51 , Issue 1 , July 2010 , 10304
Copyright
© EDP Sciences, 2010

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