12 results
Enhanced Antimony Activation for Ultra-Shallow Junctions in Strained Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 912 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0912-C02-03
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- 2006
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Modeling and Simulation of the Influence of SOI Structure on Damage Evolution and Ultra-shallow Junction Formed by Ge Preamorphization Implants and Solid Phase Epitaxial Regrowth
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- Journal:
- MRS Online Proceedings Library Archive / Volume 912 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0912-C03-04
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- 2006
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Low Temperature B Activation in SOI Using Optimised Vacancy Engineering Implants
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- Journal:
- MRS Online Proceedings Library Archive / Volume 864 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, E7.1
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- 2005
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Doping and Mobility Profiles in Defect-Engineered Ultra-shallow Junctions: Bulk and SOI
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- Journal:
- MRS Online Proceedings Library Archive / Volume 810 / 2004
- Published online by Cambridge University Press:
- 17 March 2011, C3.8
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- 2004
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Current Understanding and Modeling of B Diffusion and Activation Anomalies in Preamorphized Ultra-Shallow Junctions
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- Journal:
- MRS Online Proceedings Library Archive / Volume 810 / 2004
- Published online by Cambridge University Press:
- 17 March 2011, C3.6
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- 2004
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Physics-Based Diffusion Simulations for Preamorphized Ultrashallow Junctions
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- Journal:
- MRS Online Proceedings Library Archive / Volume 765 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, D6.8
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- 2003
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Experimental Study on the Mechanism of Carbon Diffusion in Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 717 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, C5.10
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- 2002
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Annealing Behavior of Locally Confined Dislocation Loops Under Inert And Oxidizing Ambient
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- Journal:
- MRS Online Proceedings Library Archive / Volume 717 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, C5.8
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- 2002
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Atomistic simulations of extrinsic defects evolution and transient enhanced diffusion in silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 669 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, J9.4
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- 2001
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Effect of the Ge preamorphisation dose on the thermal evolution of End of Range defects
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- Journal:
- MRS Online Proceedings Library Archive / Volume 669 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, J4.8
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- 2001
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The Influence of the Initial Supersaturation of Si Interstitial Atoms on the Relative Thermal Stability of Dislocation Loops in Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 610 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, B11.11
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- 2000
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Atomistic simulations of the Ostwald ripening of Si nanoparticles ion beam synthesized in SiO2
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- Journal:
- MRS Online Proceedings Library Archive / Volume 647 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, O5.7
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- 2000
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