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Characteristics are shown for shallow boron-doped layers formed by a new doping method called Rapid Vapor-phase direct Doping (RVD) which is suitable for making shallow junctions of less than 50 nm. In this method, boron atoms are doped into Si from the vaporphase after the native oxide is removed in hydrogen. From the results obtained for time dependence of doping characteristics, it was found that the surface boron concentration increases almost proportionally to the doping time. This result means that the surface boron concentration is determined by the amount of supplied boron atoms. It is a unique characteristic of this method and a reason why shallow junctions can be fonrned. This method was applied to the base region of a bipolar transistor and produced a normal DC characteristics.
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