1 results
Long Time Data Retention and A Mechanism in Ferroelectric-Gate Field Effect Transistors with HfO2 Buffer Layer
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 830 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, D2.9
- Print publication:
- 2004
-
- Article
- Export citation