We report properties of devices made by the adhesion of semiconductor crystals, including several tetracene specimens, to polymer gate dielectrics along with measurements of tetracene crystals on conventional Si/SiO2 dielectric surfaces. For the best tetracene, pentacene, and alpha-6T devices, mobilities exceeding 0.1 cm2/V were measured, correlating well with expectations based on the literature, and in the case of tetracene and alpha-6T, exceeding the thin film mobility value. The devices were prepared in the open laboratory using simpler crystal handling techniques than had been thought necessary.