During the last 5 years, the semi-conductor industry has enhanced device
performances by scaling down the feature sizes and by introduction of new
technologies. Transmission electron microscopy with high resolution images (HREM)
has become an indispensable tool for analyzing devices structure at nanoscale,
for failures analysis, defects review and manufacture controlling. In parallel to this
progress on the devices, the sample preparation techniques for MET compatible with the
requirements of the industrial world were developed and open new prospects. In this paper,
we present these techniques of sample preparation. Then we show examples in what high
resolution images make it possible to answer industrial problems.