4 results
Photoemission Study of Energy Band Alignment of Ge2Sb2Te5 and Common CMOS Materials
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1072 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1072-G02-08
- Print publication:
- 2008
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Sub-30 nm FinFETs with Schottky-Barrier Source/Drain Featuring Complementary Metal Silicides and Fully-Silicided Gate for P-FinFETs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 995 / 2007
- Published online by Cambridge University Press:
- 01 February 2011, 0995-G05-17
- Print publication:
- 2007
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- Article
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Material and Electrical Characterization of Nickel Silicide-Carbon as Contact Metal to Silicon-Carbon Source and Drain Stressors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 995 / 2007
- Published online by Cambridge University Press:
- 01 February 2011, 0995-G05-07
- Print publication:
- 2007
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Process-Induced Strained P-MOSFET Featuring Nickel-Platinum Silicided Source/Drain
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- Journal:
- MRS Online Proceedings Library Archive / Volume 913 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0913-D02-04
- Print publication:
- 2006
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