In this work we investigate the ion beam synthesis of Sn and Sb clusters in
thin oxides. 80 keV (fluences of 0.1-1 × 1016 cm−2) Sn
implantation in 85 nm thick SiO2, followed by annealing
(800-1000°C for 30-300 sec under Ar or N 2 dry ambient) in a rapid thermal
processing (RTP) system, leads to the formation of two cluster bands, near
the middle of the SiO2 layer and the Si/SiO2
interface. In addition, big isolated clusters are randomly distributed
between the two bands. Cluster-size distribution and cluster-crystallinity
are related to implantation fluence and annealing time. Low energy (10-12
keV) Sb and Sn implantation (fluences 2-5 × 1015 cm−2)
leads to the formation of very uniform cluster-size distribution. Under
specific process conditions, only an interface cluster band is observed.