6 results
High resistivity isolation for AlGaN/GaN HEMT using Al double-implantation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1635 / 2014
- Published online by Cambridge University Press:
- 17 February 2014, pp. 9-14
- Print publication:
- 2014
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ZnO Thin Films of High Crystalline Quality Deposited on Sapphire and GaN Substrates by High Temperature Sputtering
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1315 / 2011
- Published online by Cambridge University Press:
- 04 April 2011, mrsf10-1315-mm10
- Print publication:
- 2011
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Multilayer antidiffusion barrier schemes for Schottky and ohmic contact metallisations to InAlN/GaN HEMTs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1298 / 2011
- Published online by Cambridge University Press:
- 11 March 2011, mrsf10-1298-t05-09
- Print publication:
- 2011
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The Influence of Growth Temperature on Oxygen Concentration in GaN Buffer Layer
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1068 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1068-C03-09
- Print publication:
- 2008
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Properties of p-Type ZnO Grown by Oxidation of Zn-Group-V Compounds
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- Journal:
- MRS Online Proceedings Library Archive / Volume 957 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0957-K08-04
- Print publication:
- 2006
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ZnO-based p-n Junctions with p-type ZnO by ZnTe Oxidation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 891 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0891-EE08-11
- Print publication:
- 2005
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