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ZnO-based p-n Junctions with p-type ZnO by ZnTe Oxidation

Published online by Cambridge University Press:  01 February 2011

Eliana Kaminska ,
Ewa Przezdziecka ,
Anna Piotrowska ,
Jacek Kossut ,
Elzbieta Dynowska ,
Witold Dobrowolski ,
Adam Barcz ,
Rafal Jakiela ,
Elzbieta Lusakowska  and
Jacek Ratajczak
Eliana Kaminska
Affiliation:
eliana@ite.waw.pl, Institute of Electron Technology, Al. Lotnikow 32/46, Warsaw, N/A, 02-668, Poland
Ewa Przezdziecka
Affiliation:
eilczuk@ifpan.edu.pl, Institute of Physics, PAS, Poland
Anna Piotrowska
Affiliation:
ania@ite.waw.pl, Institute of Electron Technology, Poland
Jacek Kossut
Affiliation:
kossut@ifpan.edu.pl, Institute of Physics, PAS, Poland
Elzbieta Dynowska
Affiliation:
dynow@ifpan.edu.pl, Institute of Physics, PAS, Poland
Witold Dobrowolski
Affiliation:
dobro@ifpan.edu.pl, Institute of Physics, PAS, Poland
Adam Barcz
Affiliation:
barcz@ite.waw.pl, Institute of Electron Technology, Poland
Rafal Jakiela
Affiliation:
jakiela@ifpan.edu.pl, Institute of Physics, PAS, Poland
Elzbieta Lusakowska
Affiliation:
lusake@ifpan.edu.pl, Institute of Physics, PAS, Poland
Jacek Ratajczak
Affiliation:
ratajczak@ite.waw.pl, Institute of Electron Technology, Poland
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Abstract

The fabrication and properties of ZnO-based rectifying p-n and p-i-n junctions are reported. ZnO films with p-type conductivity were obtained by oxidation of ZnTe grown by MBE on GaAs substrate. Insulating and n-type ZnO films were deposited by magnetron sputtering. The processing of p-n junctions into device structures involved the formation of mesa geometry and preparation of ohmic contacts to p- and n-type regions.

Keywords

II-VIoxidationoptoelectronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE08-11
Copyright
Copyright © Materials Research Society 2006

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References

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