Trap parameters in
poly(1-(3,4-difluorophenyl)-2-(4-pentylcyclohexylphenyl)acetylene) (PDPA-2F)
based devices have been investigated by using the thermally stimulated
current (TSC) technique. The device structure is ITO-PEDOT-(PDPA-2F)-M,
where M stands for the cathode metal (Al, Ca/Al, and Au). The results reveal
at least three TSC peaks in devices denoted as peaks A, B and C. Comparing
trap parameters in ITO-PEDOT-(PDPA-2F)-Au hole-only device and
ITO-PEDOT-(PDPA-2F)-Ca Al (Al) bipolar devices, we assigned A and B trap
types to hole-like traps and C type traps to electron-like traps. The trap
densities are in the range of 1015−1017 cm−3 and the trap
levels are 0.12 eV (A type traps), 0.36 eV (B type traps), and 0.25 eV (C
type traps).