6 results
Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AlGaN quantum well
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- Journal:
- The European Physical Journal - Applied Physics / Volume 27 / Issue 1-3 / July 2004
- Published online by Cambridge University Press:
- 15 July 2004, pp. 271-273
- Print publication:
- July 2004
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Effect of High Temperature Single and Multiple AlN Intermediate Layers on N-polar and Ga-polar GaN Grown by Molecular Beam Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I3.34.1
- Print publication:
- 2001
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Characterization of AlxGa1-xN/ AlyGa1-yN Distributed Bragg Reflectors Grown by Plasma Assisted Molecular Beam Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I6.12.1
- Print publication:
- 2001
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Electron Beam Pumping in Nitride Vertical Cavities with GaN/ Al0.25 Ga0.75 N Bragg Reflectors
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 654-660
- Print publication:
- 2000
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Electron Beam Pumping in Nitride Vertical Cavities with GaN/ Al0.25 Ga0.75 N Bragg Reflectors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.21
- Print publication:
- 1999
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InxGa(1-x)N Alloys as Electronic Materials
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- Journal:
- MRS Online Proceedings Library Archive / Volume 468 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 57
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- 1997
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