6 results
New Materials-Theory-Based Model for Output Characteristics of AlGaN/GaN Heterostructure Field Effect Transistors
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 640-646
- Print publication:
- 2000
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Thermal Modeling of III-nitride Heterostructure Field Effect Transistors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T6.26.1
- Print publication:
- 2000
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Fabrication Methods for Au Nanocluster Devices
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- Journal:
- MRS Online Proceedings Library Archive / Volume 582 / 1999
- Published online by Cambridge University Press:
- 21 March 2011, H12.5
- Print publication:
- 1999
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New Materials-Theory-Based Model for Output Characteristics of AlGaN/GaN Heterostructure Field Effect Transistors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.15
- Print publication:
- 1999
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Extrinsic Performance Limitations of AlGaN/GaN Heterostructure Field Effect Transistors
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 678-683
- Print publication:
- 1999
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Extrinsic Performance Limitations of AlGaN/GaN Heterostructure Field Effect Transistors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G6.35
- Print publication:
- 1998
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