5 results
Modeling the Dependence of the Gate Current on Ge Content in Ultrathin Gate Dielectric Pmos Devices with Poly-Si1−Gex Gate Material
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- Journal:
- MRS Online Proceedings Library Archive / Volume 567 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 127
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- 1999
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A Comparison of Mos Devices with In-Situ Boron Doped Polysilicon and Poly Sige Gates Deposited in an Rtcvd System Using S12H6 and B2H6 Gas Mixture
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- Journal:
- MRS Online Proceedings Library Archive / Volume 525 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 207
- Print publication:
- 1998
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High Quality RTCVD Sidewall Spacer Dielectrics
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- Journal:
- MRS Online Proceedings Library Archive / Volume 387 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 277
- Print publication:
- 1995
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Rapid Thermal Chemical Vapor Deposition of Polycrystalline Silicon-Germanium Films on SiO2 and Their Properties
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- Journal:
- MRS Online Proceedings Library Archive / Volume 403 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 333
- Print publication:
- 1995
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Comparison of Film Quality and Step Coverage for Silicon Dioxide Dielectrics Formed by RTCVD Using Tetraethoxysilane and Silane
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- Journal:
- MRS Online Proceedings Library Archive / Volume 338 / 1994
- Published online by Cambridge University Press:
- 22 February 2011, 43
- Print publication:
- 1994
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