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Post-annealed silicon nanocrystal formation on substoichiometric SiOxNy (x < 2, y < 1) layers deposited in SiH4-N2O radiofrequency discharges
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- Journal:
- The European Physical Journal - Applied Physics / Volume 34 / Issue 2 / May 2006
- Published online by Cambridge University Press:
- 25 May 2006, pp. 147-150
- Print publication:
- May 2006
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Role of the Surface Steps on the Growth of CrSi2 on {111} Silicon.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 402 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 535
- Print publication:
- 1995
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