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Effect of Stoichiometry of TiN Electrode on the Switching Behavior of TiN/HfOx/TiN Structures for Resistive RAM
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1631 / 2014
- Published online by Cambridge University Press:
- 17 February 2014, mrsf13-1631-p03-01
- Print publication:
- 2014
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- Article
- Export citation