13 results
Progress in the Preparation of Aluminum Nitride Substrates from Bulk Crystals
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- Journal:
- MRS Online Proceedings Library Archive / Volume 722 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, K1.1
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- 2002
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Epitaxial Growth of III-Nitride Layers on Aluminum Nitride Substrates
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 411-416
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- 1999
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Epitaxial Growth of III-Nitride Layers on Aluminum Nitride Substrates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G3.76
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- 1998
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Temperature-Dependent Strain Relaxation and Islanding of Ge/Si(111)
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- MRS Online Proceedings Library Archive / Volume 399 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 295
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- 1995
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Control of threading dislocations in lattice-mismatched heteroepitaxy
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- MRS Online Proceedings Library Archive / Volume 263 / 1992
- Published online by Cambridge University Press:
- 25 February 2011, 485
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- 1992
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Temperature Dependence Of The Electrical Properties Of Epitaxial Caf2 Layers On Si(111) Summary Abstract
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- Journal:
- MRS Online Proceedings Library Archive / Volume 91 / 1987
- Published online by Cambridge University Press:
- 28 February 2011, 371
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- 1987
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Growth and Characterization of Epitaxial CoSi2 on Si(001)
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- Journal:
- MRS Online Proceedings Library Archive / Volume 160 / 1989
- Published online by Cambridge University Press:
- 28 February 2011, 237
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- 1989
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Strain in Epitaxial GaAs on CaF2/Si(111)
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- Journal:
- MRS Online Proceedings Library Archive / Volume 160 / 1989
- Published online by Cambridge University Press:
- 28 February 2011, 527
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- 1989
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Reduction of Strain in Epitaxial GaAs on CaF2/Si Substrates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 116 / 1988
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- 28 February 2011, 257
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- 1988
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STRAIN AND REORDERING IN CaF2/Si(lll) EPITAXY
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- MRS Online Proceedings Library Archive / Volume 56 / 1985
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- 28 February 2011, 247
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- 1985
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DEFECTS IN MBE SILICON
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- Journal:
- MRS Online Proceedings Library Archive / Volume 56 / 1985
- Published online by Cambridge University Press:
- 28 February 2011, 27
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- 1985
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GROWTH AND CHARACTERIZATION OF EPITAXIAL Si/CoSi2 AND Si/CoSi2/Si HETEROSTRUCTURES
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- MRS Online Proceedings Library Archive / Volume 56 / 1985
- Published online by Cambridge University Press:
- 28 February 2011, 151
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- 1985
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STRAIN MEASUREMENT IN EPITAXIAL NiSi2/Si(lll) BY MeV ION CHANNELING
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- Journal:
- MRS Online Proceedings Library Archive / Volume 56 / 1985
- Published online by Cambridge University Press:
- 28 February 2011, 157
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- 1985
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