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The Mechanism of {113} Defect Formation in Silicon: Clustering of Interstitial–Vacancy Pairs Studied by In Situ High-Resolution Electron Microscope Irradiation
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- Journal:
- Microscopy and Microanalysis / Volume 19 / Issue S5 / August 2013
- Published online by Cambridge University Press:
- 06 August 2013, pp. 38-42
- Print publication:
- August 2013
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Observation of Vacancy Clustering in Si Crystals During in Situ Electron Irradiation in a High Voltage Electron Microscope
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- Journal:
- MRS Online Proceedings Library Archive / Volume 404 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 189
- Print publication:
- 1995
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